Hynix, Samsung push NAND flash below 30-nm

Hynix, Samsung push NAND flash below 30-nm: "Competition is hotting up in NAND flash memory as South Korea's Hynix Semiconductor Inc. has claimed it has used a 26-nm manufacturing process technology to produce a device with a capacity of 64-Gbits, according to reports. And local rival Samsung has said it is aiming to have a 27-nm NAND flash memory in production in the second quarter of 2010, according to another report.